MMUN2211LT3G
On Semiconductor
The MMUN2211LT3G is an NPN pre-biased transistor from ON Semiconductor. It offers a 50V collector-emitter voltage and a 100mA continuous current in a SOT-23-3 package.
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The MMUN2216LT1 from On Semiconductor is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing component count and board space. It features a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA.
The transistor is housed in a compact SOT-23 package, making it suitable for low-power, space-constrained designs. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce, and a maximum Vce saturation of 250mV at 1mA base current and 10mA collector current. The device also includes a nominal base resistor (R1) of 4.7 kOhms.
With a maximum power dissipation of 400mW at 25°C (on a 1.0 x 1.0 inch pad), the MMUN2216LT1 is suitable for various general-purpose switching and amplification tasks where reduced component count and board space are beneficial. The operating temperature range is from -55°C to +150°C.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the MMUN2216LT1 is 50V.
The maximum collector current for the MMUN2216LT1 is 100mA.
The minimum DC current gain (hFE) for the MMUN2216LT1 is 160 at 5mA collector current and 10V Vce.
The MMUN2216LT1 is supplied in a SOT-23-3 surface mount package.
The MMUN2216LT1 has a nominal base resistor (R1) of 4.7 kOhms.
The junction and storage temperature range for the MMUN2216LT1 is -55°C to +150°C.