| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,020 pcs
|
64020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,490 pcs
|
2490 pcs | On Request | 1 | On Request | On Request | 0803+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMUN2215LT1G is a pre-biased NPN digital transistor manufactured by ON Semiconductor. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA.
The transistor has a maximum power dissipation of 400mW and a DC current gain (hFE) of 160 minimum at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. It includes a nominal base resistor (R1) of 10 kΩ.
This component is designed for surface mounting and comes in a TO-236-3, SC-59, SOT-23-3 package. The MMUN2215LT1G is RoHS3 compliant, has an MSL of 1 (Unlimited), and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 Vdc.
The maximum continuous collector current is 100 mAdc.
The maximum power dissipation is 400 mW.
The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V collector-emitter voltage.
The maximum Vce saturation voltage is 250mV at 1mA base current and 10mA collector current.
The nominal base resistor (R1) value is 10 kΩ.
This transistor is supplied in a TO-236-3, SC-59, SOT-23-3 package.