MMUN2212LT1G The MMUN2212LT1G is an NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2212LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMUN2212LT1G is an NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 261,355 pcs
$ Price Range: $0.99

MMUN2212LT1G Available from 4 distributors

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213,000 pcs
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MMUN2212LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2212LT1G Description

Short technical summary and product information.

The ON Semiconductor MMUN2212LT1G is a digital transistor (BRT) featuring an NPN pre-biased configuration. This device integrates a single transistor with a monolithic bias network, simplifying circuit design and reducing component count and board space. It is designed to replace a single device and its external resistor bias network.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device has a maximum power dissipation of 246 mW. It also features a DC current gain (hFE) of 60 minimum at 5mA collector current and 10V collector-emitter voltage, and a Vce saturation of 250mV maximum at 300µA base current and 10mA collector current. The internal bias resistors (R1 and R2) are nominally 22 kΩ.

 

This transistor is supplied in a SOT-23-3 (TO-236) surface mount package. It is Pb-free and Halogen-free, complying with RoHS standards. The device is suitable for applications requiring simplified circuitry and reduced component count.

MMUN2212LT1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: MMUN2212LT1G NPN Pre-Biased Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

MMUN2212LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2212LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2212LT1G Features

  • NPN pre-biased transistor simplifies design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 22kΩ bias resistors.
  • SOT-23-3 surface mount package.

MMUN2212LT1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count and board space.
  • Simplifies circuit design and assembly.
  • Suitable for low-power switching.

MMUN2212LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2212LT1G?

The maximum collector-emitter voltage (VCEO) for the MMUN2212LT1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMUN2212LT1G is 100 mAdc.

What is the package type for the MMUN2212LT1G?

The MMUN2212LT1G is available in a SOT-23-3 (TO-236) surface mount package.

What is the RoHS status of this component?

The MMUN2212LT1G is RoHS3 Compliant.

Is this component Pb-Free and Halogen Free?

Yes, the MMUN2212LT1G is Pb-Free and Halogen Free.

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