| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The MMUN2134LT1G is a PNP Pre-Biased Transistor manufactured by ON Semiconductor. This component integrates a single transistor with a monolithic bias network, consisting of a series base resistor (R1 = 22 kΩ) and a base-emitter resistor (R2 = 47 kΩ). This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device also features a maximum power dissipation of 246 mW at 25°C. It has a DC current gain (hFE) of 80 minimum at 5mA/10V and a Vce saturation of 250mV maximum at 1mA/10mA.
The MMUN2134LT1G is supplied in a SOT-23-3 (TO-236) surface mount package. This package type is common for small signal transistors and is suitable for automated assembly processes. The device is designed to replace a single transistor and its external bias resistors, offering a cost-effective solution for various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The package is SOT-23-3 (TO-236).
It includes a series base resistor (R1) of 22 kΩ and a base-emitter resistor (R2) of 47 kΩ.
Yes, it is RoHS3 Compliant.
The MSL is 1.