MMUN2132LT1G The MMUN2132LT1G is a PNP Pre-Biased Transistor from On Semiconductor, featuring a 50V collector-emitter voltage and 100mA continuous collector current. It is supplied in a SOT-23-3 package.
Mfr Part #:

MMUN2132LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMUN2132LT1G is a PNP Pre-Biased Transistor from On Semiconductor, featuring a 50V collector-emitter voltage and 100mA continuous collector current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 55,020 pcs
$ Price Range: $0.99

MMUN2132LT1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
52,020 pcs
52020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

MMUN2132LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2132LT1G Description

Short technical summary and product information.

The MMUN2132LT1G is a PNP digital transistor from On Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces a single transistor and its external bias resistors, reducing component count and board space.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It features a nominal base resistor (R1) and base-emitter resistor (R2) of 4.7 kΩ. The transistor type is PNP Pre-Biased, with a DC current gain (hFE) of at least 15 at 5mA and 10V, and a Vce saturation of 250mV maximum at 1mA and 10mA.

 

This component is housed in a SOT-23-3 (TO-236) surface-mount package. It is rated for a power dissipation of 246 mW. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, indicating its suitability for environmentally conscious designs.

 

The MMUN2132LT1G is suitable for applications where simplified digital logic or signal level shifting is required, leveraging its integrated bias network for ease of use and reduced component footprint.

MMUN2132LT1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: MMUN2132LT1G PNP Pre-Biased Transistor
Subcategory: Pre-Biased

MMUN2132LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MMUN2132LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2132LT1G Features

  • PNP Pre-Biased Transistor simplifies design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 4.7kΩ bias resistors.
  • SOT-23-3 surface-mount package.

MMUN2132LT1G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal level control.
  • Reduces component count.
  • Saves board space in designs.
  • Used in general electronic applications.

MMUN2132LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2132LT1G?

The maximum collector-emitter voltage (VCEO) for the MMUN2132LT1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMUN2132LT1G is 100 mAdc.

What type of package is the MMUN2132LT1G in?

The MMUN2132LT1G is supplied in a SOT-23-3 (TO-236) package.

Is the MMUN2132LT1G RoHS compliant?

Yes, the MMUN2132LT1G is RoHS3 Compliant.

What are the integrated resistor values?

The MMUN2132LT1G has integrated resistors with values of 4.7 kΩ for both the base resistor (R1) and the base-emitter resistor (R2).

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