MMUN2115LT1G

The ON Semiconductor MMUN2115LT1G is a PNP type pre-biased transistor designed for simplified circuit applications. It integrates a single transistor with a monolithic bias resistor network, reducing component count and board space.

Key electrical characteristics include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. The device has a power dissipation rating of 400mW. It features a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.

The transistor is housed in a SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The integrated bias resistor network simplifies external circuitry, making it ideal for applications where component reduction and ease of design are critical.

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.