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MMUN2113LT3G The MMUN2113LT3G is a PNP Pre-Biased Digital Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

MMUN2113LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMUN2113LT3G is a PNP Pre-Biased Digital Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 110,000 pcs
$ Price Range: $0.99

MMUN2113LT3G Available from 1 distributor

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✓ Non-Authorised
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110,000 pcs
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MMUN2113LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Power
Power Dissipation (Max)
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MMUN2113LT3G Description

Short technical summary and product information.

The MMUN2113LT3G is a PNP Pre-Biased Digital Transistor (BRT) from ON Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces a single transistor and its external resistors, reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It has a maximum power dissipation of 246 mW. The transistor type is PNP Pre-Biased, with a typical DC current gain (hFE) of 80 at 5mA and 10V. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA and 10mA.

 

This digital transistor incorporates internal bias resistors, specified as R1 = 47 kΩ and R2 = 47 kΩ. It is suitable for applications requiring simplified digital logic interfaces. The device is supplied in a SOT-23-3 (TO-236) surface mount package.

 

The MMUN2113LT3G is Pb-Free and Halogen Free, compliant with RoHS standards. It has a Moisture Sensitivity Level (MSL) of 1.

MMUN2113LT3G Quick Information

Product Type: Digital Transistor
Canonical Name: MMUN2113LT3G PNP Pre-Biased Digital Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

MMUN2113LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2113LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2113LT3G Features

  • PNP Pre-Biased Digital Transistor.
  • 50V Collector-Emitter Voltage rating.
  • 100mA Continuous Collector Current.
  • Integrated 47 kΩ bias resistors.
  • SOT-23-3 surface mount package.

MMUN2113LT3G Applications

  • Simplifies digital logic interfaces.
  • Reduces component count.
  • Ideal for space-constrained designs.
  • Suitable for general-purpose switching.

MMUN2113LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2113LT3G?

The maximum collector-emitter voltage (VCEO) for the MMUN2113LT3G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMUN2113LT3G is 100 mAdc.

What type of transistor is the MMUN2113LT3G?

The MMUN2113LT3G is a PNP Pre-Biased Digital Transistor.

What is the package type for the MMUN2113LT3G?

The MMUN2113LT3G is supplied in a SOT-23-3 (TO-236) surface mount package.

Does the MMUN2113LT3G meet RoHS standards?

Yes, the MMUN2113LT3G is RoHS3 Compliant.

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