MMUN2113LT1G The MMUN2113LT1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

MMUN2113LT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMUN2113LT1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 183,063 pcs
$ Price Range: $0.99

MMUN2113LT1G Available from 5 distributors

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MMUN2113LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2113LT1G Description

Short technical summary and product information.

The MMUN2113LT1G is a PNP type, pre-biased bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network, reducing component count and board space.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It has a DC current gain (hFE) of 80 minimum at 5mA and 10V, and a Vce saturation of 250mV maximum at 300µA and 10mA. The integrated bias resistor has a nominal value of 47 kΩ.

 

This transistor is housed in a surface-mount SOT-23-3 (TO-236) package. It is suitable for applications requiring reduced component count and simplified circuit layouts. The device is also Pb-free and halogen-free.

 

Additional specifications include a maximum power dissipation of 246mW and an input forward voltage of 40Vdc, with an input reverse voltage of 10Vdc.

MMUN2113LT1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: MMUN2113LT1G PNP Pre-Biased Transistor
Subcategory: Single, Pre-Biased Bipolar Junction Transistor (BJT)

MMUN2113LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2113LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2113LT1G Features

  • PNP pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 47 kΩ bias resistor.
  • Surface mount SOT-23-3 package.

MMUN2113LT1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Suitable for space-constrained applications.
  • Simplifies bias network implementation.

MMUN2113LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2113LT1G?

The maximum collector-emitter voltage (VCEO) for the MMUN2113LT1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMUN2113LT1G is 100 mAdc.

What is the package type for the MMUN2113LT1G?

The MMUN2113LT1G is available in SOT-23-3 (TO-236) and other surface mount packages like SC-59 and SC-75.

Is the MMUN2113LT1G RoHS compliant?

Yes, the MMUN2113LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for the MMUN2113LT1G is 1.

What is the integrated resistor value?

The integrated bias resistor value (R1) is 47 kΩ.

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