MMUN2112LT1G The On Semiconductor MMUN2112LT1G is a PNP pre-biased bipolar transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2112LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMUN2112LT1G is a PNP pre-biased bipolar transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 937,772 pcs
$ Price Range: $0.99

MMUN2112LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
936,000 pcs
936000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,772 pcs
1772 pcs On Request 1 On Request On Request 20+ On Request On Request

MMUN2112LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMUN2112LT1G Description

Short technical summary and product information.

The On Semiconductor MMUN2112LT1G is a PNP type digital transistor featuring a monolithic bias resistor network. This integrated design replaces a single transistor and its external resistors, simplifying circuit design and reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device has a maximum power dissipation of 246 mW at 25°C. It includes integrated resistors with nominal values of 22 kΩ for both R1 (base) and R2 (base-emitter).

 

The transistor type is PNP - Pre-Biased. It has a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. The Vce saturation is a maximum of 250mV at 300µA base current and 10mA collector current.

 

This component is supplied in a surface mount SOT-23-3 (TO-236-3, SC-59) package. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

MMUN2112LT1G Quick Information

Product Type: Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Pre-Biased

MMUN2112LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2112LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2112LT1G Features

  • PNP pre-biased bipolar transistor.
  • 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • Integrated 22kΩ bias resistors.
  • Surface mount SOT-23-3 package.

MMUN2112LT1G Applications

  • Simplifies circuit design.
  • Reduces board space.
  • Reduces component count.
  • Suitable for digital logic applications.

MMUN2112LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2112LT1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the power dissipation of this transistor?

The maximum power dissipation is 246 mW at 25°C.

What are the integrated resistor values?

It features integrated resistors R1 and R2, each with a nominal value of 22 kΩ.

What package type is the MMUN2112LT1G supplied in?

The MMUN2112LT1G is supplied in a SOT-23-3 surface mount package.

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

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