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MMUN2111LT1G The ON Semiconductor MMUN2111LT1G is a PNP pre-biased bipolar transistor designed for simplified circuit designs. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMUN2111LT1G

Available from 10 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMUN2111LT1G is a PNP pre-biased bipolar transistor designed for simplified circuit designs. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 117,679 pcs
$ Price Range: $0.99

MMUN2111LT1G Available from 10 distributors

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Optech Co.,Limited ✓
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61,020 pcs
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61020 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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34,955 pcs
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34955 pcs On Request 1 On Request On Request 21+ On Request On Request
Fe Components ✓
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8,635 pcs
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8635 pcs On Request 1 On Request On Request On Request On Request On Request
ACK ELEKTRONIK ✓
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3,000 pcs
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Braun Electronic Components ✓
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2,704 pcs
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2704 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
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2,704 pcs
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2704 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
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1,874 pcs
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1874 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
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1,580 pcs
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1580 pcs On Request 1 On Request On Request On Request On Request On Request
PROSOFT ELECTRONICS ✓
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1,200 pcs
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1200 pcs On Request 1 On Request On Request 17+ On Request On Request
Hybrid Electronics ✓
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7 pcs
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7 pcs On Request 1 On Request On Request NO DC On Request On Request
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MMUN2111LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MMUN2111LT1G Description

Short technical summary and product information.

The MMUN2111LT1G from ON Semiconductor is a PNP type bipolar junction transistor (BJT) featuring an integrated monolithic bias resistor network. This design simplifies circuit construction by eliminating external resistors, reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 50V and a continuous collector current (Ic) of 100mA. The transistor exhibits a typical DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. Its Vce saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. The maximum power dissipation is rated at 246mW.

 

This device includes internal resistors with values of 10 kΩ for both R1 (base) and R2 (base-emitter). It is supplied in a surface-mount SOT-23-3 (TO-236) package, also referred to as SC-59. The MMUN2111LT1G is suitable for applications where circuit simplification and space reduction are critical design factors.

MMUN2111LT1G Quick Information

Product Type: PNP Pre-Biased Transistor
Canonical Name: MMUN2111LT1G PNP Pre-Biased Transistor
Subcategory: Pre-Biased

MMUN2111LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMUN2111LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMUN2111LT1G Features

  • PNP pre-biased bipolar transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10 kΩ bias resistors.
  • Surface mount SOT-23-3 package.

MMUN2111LT1G Applications

  • Simplifies circuit design and reduces components.
  • Ideal for space-constrained applications.
  • Reduces overall system cost.
  • Suitable for general switching tasks.

MMUN2111LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMUN2111LT1G?

The maximum collector-emitter voltage is 50V.

What is the continuous collector current rating?

The continuous collector current is 100 mA.

What is the package type for the MMUN2111LT1G?

The device is supplied in a TO-236-3, SC-59, SOT-23-3 package.

What are the integrated resistor values?

The integrated resistors are R1 = 10 kΩ and R2 = 10 kΩ.

What is the maximum power dissipation?

The maximum power dissipation is 246 mW.

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