| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMSTA28T146 from ROHM Semiconductor is a single NPN Darlington bipolar junction transistor (BJT) suitable for various electronic applications. This component features a maximum collector-emitter voltage of 80V and a continuous collector current of up to 300mA.
With a high DC current gain (hFE) of 10000 at 100mA and 5V, the MMSTA28T146 is well-suited for amplification and switching tasks where significant current gain is required. The saturation voltage (Vce) is a maximum of 1.5V at 100µA base current and 100mA collector current, indicating efficient switching performance.
This transistor has a power dissipation rating of 200 mW and an operating junction temperature range of up to 150°C. It is designed for surface mounting and comes in a TO-236-3, SC-59, SOT-23-3 package, also referred to as SMT3 by the supplier.
The MMSTA28T146 operates at a frequency of 200MHz. It is classified under the NPN-Darlington transistor type, making it a versatile component for designs requiring high gain characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 V.
The continuous collector current is 300 mA.
The minimum DC current gain (hFE) is 10000 at 100mA collector current and 5V collector-emitter voltage.
The operating junction temperature is up to 150°C.
It is supplied in a TO-236-3, SC-59, SOT-23-3 (SMT3) package for surface mounting.