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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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238,020 pcs
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238020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
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| Supplier Device Package | |
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| Thermal Resistance Junction-to-Ambient | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Diodes Incorporated MMSTA06-7-F is an NPN bipolar junction transistor (BJT) suitable for medium power amplification and switching applications. It is housed in an ultra-small SOT-323 surface mount package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 500mA. The device offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V VCE. Its collector-emitter saturation voltage (VCE(SAT)) is a maximum of 250mV at 10mA base current and 100mA collector current. The gain-bandwidth product (fT) is 100MHz.
This transistor operates within a temperature range of -55°C to 150°C. It is constructed with an epitaxial planar die and features lead-free plating. The SOT-323 package is ideal for space-constrained surface mount designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMSTA06-7-F is 80V.
The continuous collector current (IC) rating for the MMSTA06-7-F is 500mA.
The power dissipation (Pd) for the MMSTA06-7-F is 200mW.
The minimum DC current gain (hFE) is 100 at 100mA collector current and 1V VCE.
The operating temperature range is -55°C to 150°C.
The MMSTA06-7-F is supplied in a SOT-323 package.