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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46,020 pcs
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46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Diodes Incorporated MMST5551-7-F is an NPN bipolar junction transistor (BJT) housed in an ultra-small SOT-323 surface mount package. This device is constructed using epitaxial planar die technology, making it suitable for high-reliability applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 200mA. It offers a DC current gain (hFE) of 80 at 10mA and 5V, with a saturation voltage (Vce) of 200mV at 5mA and 50mA. The transistor operates at frequencies up to 300MHz.
With a power dissipation rating of 200 mW and an operating temperature range of -55°C to 150°C, the MMST5551-7-F is designed for demanding environments. Its complementary NPN type is the MMST5401. The device is qualified to AEC-Q101 standards for high reliability and is PPAP capable, making it suitable for automotive applications.
The SOT-323 package is ideal for space-constrained designs, and its surface mount capability simplifies assembly processes. The terminals are matte tin plated, solderable per MIL-STD-202, Method 208.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMST5551-7-F is 160V.
The continuous collector current (IC) rating for the MMST5551-7-F is 200mA.
The MMST5551-7-F operates at frequencies up to 300MHz.
The MMST5551-7-F is supplied in a SOT-323 surface mount package.
The operating temperature range for this transistor is -55°C to 150°C.
The MMST5551-7-F is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMST5551-7-F is Level 1.