| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,600 pcs
|
18600 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Lead Style | |
| Package / Case | |
| SVHC Present | |
| Storage Temperature |
The Magnachip Semiconductor MMSF60R580QTH is a power MOSFET designed for efficient power management applications. It features a high drain-source voltage rating of 600V and a continuous drain current of 8.0A at 25°C.
With a maximum on-resistance of 580mOhm at a gate-source voltage of 10V, this MOSFET is suitable for various switching applications. The gate threshold voltage is rated at a maximum of 4.0V, and the typical gate charge is 13.0nC.
This component is housed in a TO-220FA package, which is a common through-hole package suitable for power applications. Its electrical characteristics make it a viable option for power supplies, motor control, and other power conversion circuits where a 600V rating is required.
The maximum drain-source voltage is 600V.
The continuous drain current is 8A at 25°C.
The maximum on-resistance is 580mOhm at Vgs=10V.
The maximum gate-source threshold voltage is 4V.
The typical gate charge is 13nC.
The MOSFET is available in a TO-220FA package.