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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1317HR5 is a high-performance RF Power LDMOS Transistor. It is engineered for demanding RF applications, delivering a peak output power of 1.3 kW across an operating frequency range of 1.02 GHz to 1.1 GHz.
This N-Channel MOSFET features a gate-source threshold voltage of 1.7 V and can handle gate-source voltages of -6 V and -10 V. It has a continuous drain current of 2.6 A and a power dissipation of 869 W. The device operates within a temperature range of -55 C to +150 C.
Packaged in an NI-1230H-4S-4 (NI-1230-4H) case, the MMRF1317HR5 is suitable for SMD/SMT mounting. Its dual channel configuration and LDMOS technology make it a robust choice for various RF power amplification needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1317HR5 has an output power of 1.3 kW.
The operating frequency range is 1.02 GHz to 1.1 GHz.
The voltage rating is 50 V.
The package type is NI-1230H-4S-4.
The mounting type is SMD/SMT.
The gate-source threshold voltage is 1.7 V.
The maximum operating temperature is +150 C.