| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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196 pcs
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196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The NXP Semiconductors MMRF1316NR1 is a dual-channel RF MOSFET transistor utilizing LDMOS technology. It is designed for RF applications, operating at a frequency of 230MHz with a gain of 27dB. The device is rated for 50V under test conditions with a test current of 100mA, delivering an output power of 300W.
This component is housed in a TO-270-4 package and features a surface mount type. The supplier device package is specified as TO-270 WB-4. Its voltage rating is 133V.
Key electrical characteristics include a test voltage of 50V and a test current of 100mA. The device provides a gain of 27dB at 230MHz, with a maximum output power of 300W. The LDMOS technology ensures efficient performance in RF power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1316NR1 has an output power of 300W.
The MMRF1316NR1 operates at a frequency of 230MHz.
The MMRF1316NR1 has a gain of 27dB.
The test voltage for the MMRF1316NR1 is 50V.
The MMRF1316NR1 is available in a TO-270-4 package.
The MMRF1316NR1 is designed for surface mount installation.