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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1312HSR5 is a high-performance RF Power Transistor utilizing LDMOS technology. It is designed for demanding applications requiring significant power output, rated at 1000W. The device operates at a voltage of 50V and a frequency of 1.034GHz, with a gain of 19.6dB.
This transistor features a dual configuration and is suitable for chassis mounting, indicated by its NI-1230-4S package. The current rating is 100 mA.
Key specifications include its LDMOS technology, 1000W power capability, and 50V operating voltage. The 1.034GHz frequency range makes it suitable for various RF power amplification tasks. Its chassis mount design facilitates integration into larger systems.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1312HSR5 transistor has a power rating of 1000W.
The operating voltage for the MMRF1312HSR5 is 50V.
The MMRF1312HSR5 operates at a frequency of 1.034GHz.
The MMRF1312HSR5 uses LDMOS technology.
The MMRF1312HSR5 is chassis mounted.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.