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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1312GSR5 is a high-power RF MOSFET LDMOS transistor designed for demanding applications. It delivers an impressive 1000W of output power at a frequency of 1.03GHz, with a gain of 19.6dB. The device is rated for 112V and tested at 50V with a test current of 100mA.
This component utilizes LDMOS technology for efficient performance. It is housed in a surface mount package, specifically the NI-1230-4S GW, and is supplied on tape and reel. The dual configuration allows for versatile circuit integration.
Key electrical specifications include a rated voltage of 112V and a test voltage of 50V. The 1.03GHz operating frequency and 19.6dB gain make it suitable for various RF power amplification tasks. The 1000W output power capability is a significant feature for high-power RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1312GSR5 has an output power of 1000W.
The operating frequency is 1.03GHz.
The gain is 19.6dB.
The rated voltage is 112V.
The test voltage is 50V and the test current is 100mA.
It uses LDMOS technology.
It is a surface mount device.