| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMRF1024HSR5 from NXP Semiconductors is a dual-channel LDMOS FET transistor specifically designed for RF applications. It operates at a frequency of 2.5GHz, with a voltage rating of 28V and a power handling capability of 50W. The transistor is configured for dual-channel operation and delivers a gain of 14.1dB.
This RF FET is suitable for applications requiring high-frequency signal amplification and switching. Its LDMOS technology ensures performance at high frequencies. The component is supplied in a NI-1230-4LS2L package and features a chassis mount type for secure installation.
With a current rating of 700 mA, the MMRF1024HSR5 is engineered for reliable performance in demanding RF circuits. Its specifications make it a suitable choice for various communication systems and high-frequency electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency is 2.5 GHz.
The voltage rating is 28 V.
The power output is 50 W.
The MMRF1024HSR5 is supplied in the NI-1230-4LS2L package.
The MMRF1024HSR5 is chassis mounted.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.