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121 pcs
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121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1023HSR5 is a high-performance RF Power Transistor. It is engineered for operation within the 2.3 GHz frequency range, delivering a power output of 66 W. This LDMOS transistor is designed for robust performance, featuring a typical gain of 14.9 dB at 2300 MHz and operating at a voltage of 28 V. The current rating is 750 mA.
This component is housed in a Chassis Mountable NI-1230-4LS2L package, suitable for integration into various RF systems. The MMRF1023HSR5 is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended storage conditions.
Ideal for applications requiring efficient power amplification at microwave frequencies, the MMRF1023HSR5 from NXP Semiconductors offers a reliable solution for demanding RF designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the MMRF1023HSR5 is 28 V.
The MMRF1023HSR5 is supplied in the NI-1230-4LS2L package.
The MMRF1023HSR5 is RoHS3 Compliant.