| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,630 pcs
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2630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1017NR3 is a Radio Frequency Field-Effect Transistor (RF FET) designed for demanding RF applications. This device features a LDMOS technology, providing robust performance. It is rated for a maximum operating voltage of 28V and can handle a current of up to 1.4A, with a significant power dissipation capability of 80W. The transistor operates efficiently at frequencies up to 960MHz, offering a typical gain of 20dB.
Designed for ease of integration into electronic circuits, the MMRF1017NR3 utilizes a surface mount package (OM-780-2). This mounting type is suitable for automated assembly processes and ensures a compact footprint on the PCB. The component is classified under the Transistors - FETs, MOSFETs - RF category, making it suitable for various RF power amplification and switching applications.
Environmental compliance includes RoHS3 compliance and an MSL rating of 1, indicating unlimited shelf life under standard conditions. The REACH status is marked as unaffected. This RF FET is a reliable choice for engineers designing systems that require high-frequency power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1017NR3 has a maximum operating voltage of 28V.
The MMRF1017NR3 can dissipate up to 80W of power.
This RF FET operates at frequencies up to 960MHz.
The MMRF1017NR3 is supplied in the OM-780-2 package.
The MMRF1017NR3 is designed for surface mount installation.