DistyParts Icon
MMRF1014NT1 The NXP Semiconductors MMRF1014NT1 is an RF LDMOS FET designed for high-frequency applications. It operates at 28V with a frequency of 1.96GHz, offering 18dB gain and 4W power.
Mfr Part #:

MMRF1014NT1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MMRF1014NT1 is an RF LDMOS FET designed for high-frequency applications. It operates at 28V with a frequency of 1.96GHz, offering 18dB gain and 4W power.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

MMRF1014NT1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MMRF1014NT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Frequency
Gain
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
View Similar Products (0)

MMRF1014NT1 Description

Short technical summary and product information.

The MMRF1014NT1 from NXP Semiconductors is a Radio Frequency (RF) Field-Effect Transistor (FET) utilizing LDMOS technology. This component is designed for RF applications, operating at a nominal voltage of 28V and a frequency of 1.96GHz.

 

Key electrical characteristics include a typical gain of 18dB, a power output of 4W, and a current rating of 50mA. The transistor is housed in a Surface Mount package, specifically PLD-1.5, making it suitable for integration into various electronic circuits.

 

This RF FET is suitable for applications requiring high-frequency signal amplification and power handling. Its LDMOS technology provides good performance characteristics for RF power applications.

MMRF1014NT1 Quick Information

Product Type: RF FET
Canonical Name: MMRF1014NT1 RF LDMOS FET
Subcategory: RF

MMRF1014NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMRF1014NT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMRF1014NT1 Features

  • LDMOS technology for RF applications.
  • Operates at 28V and 1.96GHz.
  • Provides 18dB typical gain.
  • Handles 4W of power.
  • Surface mount PLD-1.5 package.

MMRF1014NT1 Applications

  • Suitable for RF power amplification.
  • Designed for high-frequency circuits.
  • Used in RF transmitter modules.
  • Ideal for communication systems.

MMRF1014NT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the MMRF1014NT1?

The operating voltage is 28 V.

What is the operating frequency of the MMRF1014NT1?

The operating frequency is 1.96 GHz.

What is the typical gain of the MMRF1014NT1?

The typical gain is 18 dB.

What is the power rating of the MMRF1014NT1?

The power rating is 4 W.

What is the current rating for the MMRF1014NT1?

The current rating is 50 mA.

What type of technology does the MMRF1014NT1 use?

The technology used is LDMOS.

What is the package type for the MMRF1014NT1?

The package type is PLD-1.5.

Home

Categories