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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MMRF1009HSR5 is a Radio Frequency Field-Effect Transistor (RF FET) designed for demanding RF applications. This device features a LDMOS technology, offering a typical gain of 19.7dB and a maximum power dissipation of 500W. It operates at a frequency of 1.03GHz with a drain-source voltage rating of 50V and a typical current of 200 mA.
The MMRF1009HSR5 comes in a NI-780S package and is designed for chassis mounting. Its robust specifications make it suitable for various high-frequency power amplification tasks in communication systems and other RF power applications.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes ensure suitability for a wide range of manufacturing processes and global regulatory requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1009HSR5 operates at a typical frequency of 1.03 GHz.
The maximum power dissipation for the MMRF1009HSR5 is 500 W.
The MMRF1009HSR5 RF FET has a typical gain of 19.7 dB.
The drain-source voltage rating for the MMRF1009HSR5 is 50 V.
The MMRF1009HSR5 is designed for chassis mounting.
The MMRF1009HSR5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMRF1009HSR5 is 1 Unlimited.