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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMRF1008HR5 is a field-effect transistor (FET) designed for RF applications. It is manufactured by NXP Semiconductors and features a voltage rating of 100V with a frequency operation of 1.03GHz. This device is suitable for use in RF amplification, switching, and signal processing circuits.
The transistor is packaged for surface-mount mounting, facilitating integration into compact RF modules and systems. Its design supports high-frequency performance with low parasitic inductance and capacitance, making it appropriate for high-speed RF switching and amplification tasks.
This component is used in various RF circuit applications, including communication systems, radar, and other high-frequency electronic devices. Proper thermal management and biasing are essential for optimal operation within specified voltage and frequency ranges.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1008HR5 has an operating voltage of 100V.
The MMRF1008HR5 operates at a frequency of 1.03GHz.