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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMRF1008GHR5 is an RF MOSFET LDMOS transistor manufactured by NXP Semiconductors. It is designed for RF amplification applications, operating in the frequency band of 900MHz to 1.215GHz.
This device provides a maximum output power of 275W and operates at a 50V supply voltage. It features a gain of 20.3dB and is built using LDMOS technology. The transistor is housed in a NI-780GH-2L package and is designed for chassis mounting.
The MMRF1008GHR5 is classified as obsolete. NXP Semiconductors recommends the AFIC10275GNR1 as a substitute, which offers active product status and different packaging (TO-270-14 Gull Wing surface mount).
Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1. However, these compliance details are based on existing database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMRF1008GHR5 operates in the frequency range of 900MHz to 1.215GHz.
The MMRF1008GHR5 transistor provides a maximum output power of 275W.
The MMRF1008GHR5 operates at a supply voltage of 50V.
The MMRF1008GHR5 offers a gain of 20.3dB.
The MMRF1008GHR5 utilizes LDMOS technology.
The MMRF1008GHR5 is supplied in the NI-780GH-2L package.
The MMRF1008GHR5 is designed for chassis mount installation.