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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
166,139 pcs
|
166139 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
721 pcs
|
721 pcs | On Request | 1 | On Request | On Request | 318 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMPQ3904 is a versatile quad NPN bipolar junction transistor (BJT) array suitable for general-purpose amplification applications. This component is housed in a 16-SOIC package, designed for surface mounting.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 200mA. The transistor array offers a gain-bandwidth product (fT) of 250MHz, indicating its suitability for moderate-frequency applications. It provides a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 5mA base current and 50mA collector current.
The operating temperature range for the MMPQ3904 is from -55°C to 150°C (TJ), ensuring reliable performance across a wide thermal spectrum. The device is specified with a power dissipation of 1W.
This transistor array is manufactured by ON Semiconductor and is available in a 16-SOIC package, requiring surface mounting. It is compatible with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 40V.
The maximum continuous collector current is 200mA.
The operating temperature range is -55°C to 150°C (TJ).
The MMPQ3904 is available in a 16-SOIC package.
The MMPQ3904 is designed for surface mounting.