| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MML09231HT1 from NXP Semiconductors is a single-stage, enhancement-mode pHEMT low noise amplifier (LNA) with active bias and high isolation. It is engineered for low noise and high linearity applications within cellular infrastructure, such as small cells and tower-mounted amplifiers (TMAs).
This LNA covers a frequency range of 700 to 1400 MHz, making it suitable for ISM, GSM, W-CDMA, and LTE applications. Key performance characteristics include an ultra-low noise figure of 0.36 dB at 900 MHz, a small-signal gain of 17.2 dB at 900 MHz, and a P1dB of 24.5 dBm at 900 MHz. It operates from a single 5V supply with a typical supply current of 55 mA.
The MML09231HT1 is housed in a cost-effective 8-pin, 2x2 mm DFN surface-mount plastic package with an exposed backside for ground. It is available in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MML09231HT1 operates from 700 MHz to 1400 MHz.
The noise figure of the MML09231HT1 is 0.36 dB at 900 MHz.
The small-signal gain of the MML09231HT1 is 17.2 dB at 900 MHz.
The P1dB of the MML09231HT1 is 24.5 dBm at 900 MHz.
The MML09231HT1 operates at a typical voltage of 5V.
The MML09231HT1 is supplied in an 8-VFDFN Exposed Pad package.