| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Power Dissipation | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The MMJT350T1G is a PNP silicon bipolar power transistor designed for line-operated applications. It offers a high collector-emitter sustaining voltage of 300V and a continuous collector current of 0.5A.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA and 10V. The transistor has a maximum power dissipation of 2.75W at 25°C (TC) and operates over a temperature range of -55°C to 150°C (TJ).
This device is supplied in a surface mount SOT-223 (TO-261) package. It is RoHS3 compliant, lead-free, and halogen-free, making it suitable for various electronic designs requiring PNP capability in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 300 Vdc.
The continuous collector current is 0.5 Adc.
The minimum DC current gain (hFE) is 30 at 50mA, 10V.
The operating temperature range is -55°C to 150°C (TJ).
The MMJT350T1G is in a TO-261-4, TO-261AA package.
Yes, the MMJT350T1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.