| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS MMIX1F520N075T2 is a high-performance N-Channel Power MOSFET designed for demanding applications. It offers a 75V drain-source voltage and an impressive continuous current capability of 500A at 25°C.
Key electrical characteristics include a low on-resistance of 1.6mOhm at 100A and 10V gate drive, and a maximum power dissipation of 830W. The MOSFET operates within a temperature range of -55°C to 175°C.
This device is constructed using TrenchT2TM GigaMOSTM technology and is avalanche rated with a fast intrinsic diode. It is packaged in a 24-PowerSMD, 21-lead surface mount configuration, offering excellent thermal transfer due to its isolated substrate.
Applications include DC-DC converters, off-line UPS systems, and high-speed power switching. Its isolated tab design simplifies mounting and contributes to space savings and high power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 75V.
The continuous drain current (Id) is 500A at 25°C.
The maximum on-resistance is 1.6mOhm when tested at 100A and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
It is available in a 24-PowerSMD, 21-lead surface mount package.