| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The MMFT2N02ELT1 from On Semiconductor is a preferred device N-Channel Power MOSFET rated for 2 Amps and 20 Volts. This device is designed for high energy in avalanche and commutation modes, with a low threshold voltage that is fully enhanced with 5 Volts. Its energy-efficient design includes a fast-recovery drain-to-source diode.
This MOSFET is suitable for low voltage, high speed switching applications such as power supplies, DC-DC converters, and PWM motor controls. It is particularly well-suited for bridge circuits where diode speed and safe operating areas are critical, offering an additional safety margin against voltage transients. The device utilizes a Silicon Gate for fast switching speeds and has a low drive requirement, allowing it to interface power loads to logic-level ICs with a maximum gate threshold voltage of 2V.
The MMFT2N02ELT1 is housed in a SOT-223 package, designed for medium power surface mount applications. The SOT-223 package can be soldered using wave or reflow methods, and its formed leads absorb thermal stress during soldering, preventing damage to the die. Key electrical characteristics include a maximum static drain-to-source on-resistance of 150mOhm at 800mA and 5V, and a maximum drain-to-source on-voltage of 0.32V at 1.6A and 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20 Vdc.
The continuous drain current is rated at 1.6 Adc.
The gate threshold voltage is a maximum of 2 Vdc at 1 mA.
The static drain-to-source on-resistance is a maximum of 150mOhm at 800mA and 5V.
This MOSFET is supplied in a SOT-223 (TO-261) package.
The operating and storage temperature range is -65 to 150 °C.