BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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160 pcs
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160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MME70R380PRH from Magnachip Semiconductor is a 700V N-channel MOSFET designed for power applications. It offers a maximum drain-source voltage (Vds) of 700V and a maximum continuous drain current (Ids) of 11.0A at 25°C. The gate-source threshold voltage (Vgs(th)) is a maximum of 4.0V, and the drain-source on-resistance (Rds(on)) is 380mOhm maximum at a gate-source voltage (Vgs) of 10V. The typical gate charge (Qg) is 34nC.
This MOSFET is housed in a TO-220FT package, suitable for through-hole mounting. Its specifications make it suitable for various power conversion and switching applications where high voltage capability is required. The device is RoHS3 compliant, MSL 1, and REACH unaffected, though these compliance statuses are unverified.
Key electrical characteristics include a 700V breakdown voltage and a low on-resistance, contributing to efficient power handling. The TO-220FT package provides standard thermal and mechanical properties for power dissipation and mounting.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 700V.
The continuous drain current is 11A at 25°C.
The maximum on-resistance is 380mΩ at Vgs=10V.
The package type is TO-220FT.
The typical gate charge is 34 nC.
The maximum gate threshold voltage is 4V.