MMDTA06-7 The Diodes Incorporated MMDTA06-7 is a dual NPN bipolar transistor array designed for low power amplification and switching applications. It features a BVCEO of 80V and a peak pulse current of 1A.
Mfr Part #:

MMDTA06-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDTA06-7 is a dual NPN bipolar transistor array designed for low power amplification and switching applications. It features a BVCEO of 80V and a peak pulse current of 1A.
✓ Total Stock: 4,045 pcs
$ Price Range: $0.99

MMDTA06-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
25 pcs
25 pcs On Request 1 On Request On Request On Request On Request On Request

MMDTA06-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMDTA06-7 Description

Short technical summary and product information.

The MMDTA06-7 from Diodes Incorporated is a high-reliability dual NPN bipolar junction transistor (BJT) array. It is designed for general-purpose low-power amplification and switching applications. This device offers a collector-emitter breakdown voltage (BVCEO) exceeding 80V and a peak pulse collector current (ICM) of 1A.

 

The MMDTA06-7 is housed in a compact SOT-26 surface-mount package, which occupies half the footprint of two equivalent transistors in a SOT-23 package. This makes it suitable for space-constrained designs. The transistor array features an epitaxial planar die construction and is qualified to AEC-Q101 standards for high reliability.

 

Key electrical characteristics include a continuous collector current of 500mA, a collector-emitter saturation voltage (Vce(sat)) of 250mV at 100mA, and a DC current gain (hFE) of 100 at 10mA and 1V. The gain bandwidth product (fT) is 163MHz.

 

This device operates within a temperature range of -55°C to +150°C. It is available in a Tape & Reel package with a standard quantity of 3,000 units per reel. The terminals have a matte tin finish, suitable for soldering per MIL-STD-202, Method 208.

MMDTA06-7 Quick Information

Product Type: Bipolar Transistor
Series: MMDTA
Canonical Name: MMDTA06-7 Dual NPN Small Signal Surface Mount Transistor
Subcategory: BJT Arrays

MMDTA06-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMDTA06-7 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDTA06-7 Features

  • Dual NPN transistors in a single SOT26 package.
  • 80V collector-emitter breakdown voltage.
  • 1A peak pulse collector current.
  • Suitable for low power amplification and switching.
  • Qualified to AEC-Q101 standards.

MMDTA06-7 Applications

  • Suitable for low power switching applications.
  • Ideal for general purpose amplification circuits.
  • Used in compact surface-mount transistor designs.
  • Applicable in high-voltage switching scenarios.
  • Suitable for small signal amplification tasks.

MMDTA06-7 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMDTA06-7?

The collector-emitter voltage (VCEO) for the MMDTA06-7 is 80V.

What is the operating temperature range for this transistor array?

The MMDTA06-7 operates within a temperature range of -55°C to +150°C.

What package type is the MMDTA06-7 supplied in?

The MMDTA06-7 is supplied in a SOT-26 surface-mount package.

Is the MMDTA06-7 RoHS compliant?

Yes, the MMDTA06-7 is RoHS3 compliant.

Home
Account

Categories