MMDT5551-7-F The Diodes Incorporated MMDT5551-7-F is a dual NPN high-voltage transistor designed for medium power amplification and switching. It comes in an ultra-small SOT-363 surface-mount package.
Mfr Part #:

MMDT5551-7-F

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDT5551-7-F is a dual NPN high-voltage transistor designed for medium power amplification and switching. It comes in an ultra-small SOT-363 surface-mount package.
✓ Total Stock: 701,020 pcs
$ Price Range: $0.99

MMDT5551-7-F Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
526,020 pcs
526020 pcs On Request 1 On Request On Request On Request On Request On Request
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100,000 pcs
100000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
75,000 pcs
75000 pcs On Request 1 On Request On Request 18+ On Request On Request

MMDT5551-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMDT5551-7-F Description

Short technical summary and product information.

The MMDT5551-7-F from Diodes Incorporated is a dual NPN bipolar junction transistor (BJT) array housed in a compact SOT-363 package. This device is engineered for medium power amplification and switching applications, offering a collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 200mA.

 

Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 10mA and 5V, and a saturation voltage (Vce) of 200mV maximum at 5mA and 50mA. The transistor array operates at frequencies up to 300MHz.

 

Designed for surface mounting, the MMDT5551-7-F features a molded plastic package with a UL Flammability Classification Rating of 94V-0. It is moisture sensitive, rated at Level 1 per J-STD-020, and has matte tin finish terminals solderable per MIL-STD-202, Method 208.

 

This component is RoHS 3 compliant, totally lead-free, and halogen and antimony-free, making it a green device suitable for various electronic designs.

MMDT5551-7-F Quick Information

Product Type: Transistor Array
Canonical Name: MMDT5551-7-F Dual NPN High-Voltage Transistor
Subcategory: Dual NPN

MMDT5551-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMDT5551-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDT5551-7-F Features

  • Dual NPN high-voltage transistor array.
  • 160V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Compact SOT-363 surface-mount package.
  • RoHS 3 compliant and halogen-free.

MMDT5551-7-F Applications

  • Ideal for medium power amplification.
  • Suitable for switching applications.
  • Used in compact electronic circuits.
  • Designed for high-voltage requirements.

MMDT5551-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMDT5551-7-F?

The maximum collector-emitter voltage (VCEO) for the MMDT5551-7-F is 160V.

What is the continuous collector current rating?

The continuous collector current (IC) rating is 200mA.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the MMDT5551-7-F supplied in?

The MMDT5551-7-F is supplied in a SOT-363 package.

Is the MMDT5551-7-F RoHS compliant?

Yes, the MMDT5551-7-F is RoHS 3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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