MMDT5401-7-F The Diodes Incorporated MMDT5401-7-F is a dual PNP small-signal transistor designed for medium power amplification and switching. It comes in an ultra-small SOT-363 surface-mount package.
Mfr Part #:

MMDT5401-7-F

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDT5401-7-F is a dual PNP small-signal transistor designed for medium power amplification and switching. It comes in an ultra-small SOT-363 surface-mount package.
✓ Total Stock: 364,020 pcs
$ Price Range: $0.99

MMDT5401-7-F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
253,020 pcs
253020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
111,000 pcs
111000 pcs On Request 1 On Request On Request 2018+ On Request On Request

MMDT5401-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMDT5401-7-F Description

Short technical summary and product information.

The Diodes Incorporated MMDT5401-7-F is a dual PNP small-signal transistor housed in a compact SOT-363 package. This device is ideal for medium power amplification and switching applications.

 

Key electrical characteristics include a collector-emitter voltage (Vceo) of 150V and a continuous collector current (Ic) of up to 200mA. It offers a DC current gain (hFE) of 60 minimum at 10mA and 5V, with a Vce saturation of 500mV maximum at 5mA and 50mA. The transistor operates at frequencies up to 300MHz.

 

This component features an epitaxial planar die construction and is available in a "Green" molding compound, making it totally lead-free and fully RoHS compliant. The operating temperature range is from -55°C to +150°C.

 

Designed for surface mounting, the MMDT5401-7-F is suitable for space-constrained applications. Its complementary NPN type is the MMDT5551.

MMDT5401-7-F Quick Information

Product Type: Dual PNP Small-Signal Transistor
Canonical Name: MMDT5401 Dual PNP Small-Signal Transistor
Subcategory: Bipolar (BJT) Arrays

MMDT5401-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMDT5401-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDT5401-7-F Features

  • Dual PNP small-signal transistor.
  • Ultra-small SOT-363 surface-mount package.
  • Rated for 150V collector-emitter voltage.
  • Handles 200mA continuous collector current.
  • Suitable for amplification and switching.

MMDT5401-7-F Applications

  • Suitable for medium power switching applications.
  • Ideal for small-signal amplification circuits.
  • Used in automotive and industrial electronics.
  • Suitable for surface-mount device designs.
  • Applicable in high-voltage switching environments.

MMDT5401-7-F FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMDT5401-7-F?

The maximum collector-emitter voltage (Vceo) for the MMDT5401-7-F is 150V.

What package type is the MMDT5401-7-F supplied in?

The MMDT5401-7-F is supplied in a SOT-363 package.

What is the operating temperature range of the MMDT5401-7-F?

The operating and storage temperature range for the MMDT5401-7-F is -55°C to +150°C.

Is the MMDT5401-7-F RoHS compliant?

Yes, the MMDT5401-7-F is RoHS3 compliant.

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