| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55,020 pcs
|
55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMDT4403-7-F from Diodes Incorporated is a dual PNP bipolar junction transistor (BJT) array housed in an ultra-small SOT-363 surface mount package. This device is constructed with epitaxial planar die technology, making it ideal for low power amplification and switching applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -600mA. The power dissipation (Pd) is rated at 200mW. The transistor offers a DC current gain (hFE) ranging from 30 to 100 depending on the test conditions, with a minimum of 100 at IC = -150mA and VCE = -2V. Saturation voltages are also specified, with VCE(SAT) at a maximum of -0.75V for IC = -500mA and IB = -50mA, and VBE(SAT) at a maximum of -1.30V under the same conditions.
Operating temperature ranges from -55°C to 150°C. The device is lead-free and RoHS3 compliant. Its compact SOT-363 package is suitable for space-constrained designs. The terminals are solderable per MIL-STD-202, Method 208, with lead-free plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage temperature range is -55°C to 150°C.
The MMDT4403-7-F is supplied in a SOT-363 package.
The maximum continuous collector current is -600mA.
The collector-emitter breakdown voltage (VCEO) is -40V.
The power dissipation is rated at 200mW.