MMDT3946FL3-7 The Diodes Incorporated MMDT3946FL3-7 is a complementary NPN and PNP bipolar transistor array in a surface-mount package. It features a 40V collector-emitter breakdown voltage and a 300MHz transition frequency.
Mfr Part #:

MMDT3946FL3-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDT3946FL3-7 is a complementary NPN and PNP bipolar transistor array in a surface-mount package. It features a 40V collector-emitter breakdown voltage and a 300MHz transition frequency.
✓ Total Stock: 138,000 pcs
$ Price Range: $0.99

MMDT3946FL3-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
138,000 pcs
138000 pcs On Request 1 On Request On Request 1615+ On Request On Request

MMDT3946FL3-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMDT3946FL3-7 Description

Short technical summary and product information.

The MMDT3946FL3-7 from Diodes Incorporated is a complementary NPN-PNP small-signal transistor array designed for low-power amplification and switching applications. This device is housed in an ultra-small X2-DFN1310-6 package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. The transistor array operates at a frequency of 300MHz and has a Vce saturation of 300mV at 5mA/50mA. The device is rated for a power dissipation of 370mW and an operating temperature range of -55°C to 150°C.

 

This component is constructed with epitaxial planar die technology. It is designed to be surface-mounted. The MMDT3946FL3-7 is also noted as being totally lead-free and fully RoHS compliant, as well as halogen and antimony free, indicating a 'Green' device.

 

Applications for this transistor array include general-purpose amplification and switching circuits where a complementary pair is beneficial. Its small package size and robust environmental compliance make it a versatile choice for various electronic designs.

MMDT3946FL3-7 Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: MMDT3946FL3-7 Complementary NPN-PNP Small-Signal Transistor
Subcategory: Bipolar Transistor Arrays

MMDT3946FL3-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMDT3946FL3-7 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDT3946FL3-7 Features

  • Complementary NPN and PNP transistor pair.
  • Ultra-small surface-mount package.
  • 40V collector-emitter breakdown voltage.
  • 300MHz transition frequency.
  • RoHS3 compliant and halogen-free.

MMDT3946FL3-7 Applications

  • Suitable for low-power switching applications.
  • Ideal for signal amplification in compact devices.
  • Used in automotive and industrial control circuits.
  • Applicable in portable electronic devices requiring small form factors.

MMDT3946FL3-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the MMDT3946FL3-7?

The operating temperature range is -55°C to 150°C.

What is the package type for the MMDT3946FL3-7?

The package type is 6-XFDFN Exposed Pad.

Is the MMDT3946FL3-7 RoHS compliant?

Yes, the MMDT3946FL3-7 is RoHS3 compliant.

What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 40V.

What is the maximum collector current?

The maximum collector current is 600mA.

What is the transition frequency?

The transition frequency is 250MHz.

What is the power dissipation rating?

The power dissipation rating is 200mW.

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