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MMDT3906-7 The Diodes Incorporated MMDT3906-7 is a dual PNP bipolar junction transistor designed for low power amplification and switching applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMDT3906-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDT3906-7 is a dual PNP bipolar junction transistor designed for low power amplification and switching applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 2,835 pcs
$ Price Range: $0.99

MMDT3906-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
2,835 pcs
On Request
2835 pcs On Request 1 On Request On Request On Request On Request On Request
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MMDT3906-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Input Capacitance
Input Impedance
Mounting Type
Operating Temperature
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MMDT3906-7 Description

Short technical summary and product information.

The MMDT3906-7 from Diodes Incorporated is a dual PNP transistor housed in an ultra-small SOT-363 surface mount package. This device is constructed using epitaxial planar die technology, making it suitable for low power amplification and switching tasks.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The transistor offers a DC current gain (hFE) ranging from 30 to 100 depending on the operating conditions, and a frequency response up to 250MHz. Saturation voltages are specified at 400mV maximum for VCE(SAT) at 5mA/50mA.

 

Mechanical data indicates a weight of approximately 0.006 grams. The SOT-363 package is designed for surface mounting, with terminals solderable per MIL-STD-202 Method 208. The operating temperature range is from -55°C to +150°C.

 

This transistor array is ideal for applications requiring compact components and reliable performance in low power signal processing.

MMDT3906-7 Quick Information

Product Type: Dual PNP Transistor
Canonical Name: MMDT3906 Dual PNP Small Signal Surface Mount Transistor
Subcategory: Transistor Array

MMDT3906-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMDT3906-7 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDT3906-7 Features

  • Dual PNP transistor in SOT-363 package.
  • Rated for 40V collector-emitter voltage.
  • Handles 200mA continuous collector current.
  • Operates up to 250MHz frequency.
  • Suitable for low power amplification and switching.

MMDT3906-7 Applications

  • Ideal for low power amplification.
  • Used in signal switching circuits.
  • Suitable for compact electronic designs.
  • General purpose signal processing.

MMDT3906-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMDT3906-7?

The collector-emitter voltage (VCEO) for the MMDT3906-7 is -40V.

What is the continuous collector current for the MMDT3906-7?

The continuous collector current (IC) for the MMDT3906-7 is -200mA.

What is the operating temperature range of the MMDT3906-7?

The MMDT3906-7 operates between -55°C and +150°C.

What package type is the MMDT3906-7 supplied in?

The MMDT3906-7 is supplied in a SOT-363 package.

What is the RoHS status of the MMDT3906-7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMDT3906-7?

The Moisture Sensitivity Level (MSL) is 1.

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