| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Power | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMDT3904V-7 from Diodes Incorporated is a dual NPN bipolar junction transistor (BJT) suitable for low-power amplification and switching circuits. It is constructed using an epitaxial planar die process and comes in an ultra-small surface mount package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. The device offers a DC current gain (hFE) of up to 100 at 10mA and 1V, with a collector-emitter saturation voltage (VCE(SAT)) of 300mV at 5mA/50mA. Its frequency response extends to 300MHz.
Mechanically, the transistor is housed in a SOT-563 package, designed for surface mounting. The operating temperature range is -55°C to 150°C. The terminals are finished with matte tin over an Alloy 42 leadframe, making them solderable per MIL-STD-202, Method 208.
This device is lead-free by design and RoHS compliant. It is also classified as a 'Green' device, indicating its manufacturing process adheres to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMDT3904V-7 is 40V.
The continuous collector current (IC) for the MMDT3904V-7 is 200mA.
The power dissipation (Pd) for the MMDT3904V-7 is 200mW.
The operating temperature range for the MMDT3904V-7 is -55°C to 150°C.
The MMDT3904V-7 is supplied in a SOT-563 package.