| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,290 pcs
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2290 pcs | On Request | 1 | On Request | On Request | 2017+ | On Request | On Request |
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The Panjit MMDT3904_R1_00001 is a dual NPN epitaxial silicon planar transistor. It is designed for general purpose switching applications and offers a collector-emitter voltage of up to 40V and a continuous collector current of 200mA.
Key electrical characteristics include a maximum power dissipation of 225mW and a DC current gain (hFE) typically ranging from 30 to 100 depending on the operating conditions. Saturation voltages are also specified, with VCE(SAT) at a maximum of 300mV and VBE(SAT) at a maximum of 0.95V.
This transistor is housed in a SOT-363 surface mount package. It operates within a temperature range of -55°C to 150°C.
The MMDT3904_R1_00001 is lead-free and uses a green molding compound, complying with EU RoHS 2.0 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMDT3904_R1_00001 is 40V.
The maximum continuous collector current (IC) for the MMDT3904_R1_00001 is 200mA.
The maximum power dissipation (PTOT) for the MMDT3904_R1_00001 is 225mW.
The operating temperature range for the MMDT3904_R1_00001 is -55°C to 150°C.
The MMDT3904_R1_00001 is supplied in a SOT-363 package.
Yes, the MMDT3904_R1_00001 is RoHS3 Compliant.