MMDT3904-7-F The Diodes Incorporated MMDT3904-7-F is a dual NPN bipolar transistor designed for medium power amplification and switching. It features a 40V collector-emitter voltage and a 200mA collector current, housed in an ultra-small SOT-363 surface mount package.
Mfr Part #:

MMDT3904-7-F

Available from 7 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMDT3904-7-F is a dual NPN bipolar transistor designed for medium power amplification and switching. It features a 40V collector-emitter voltage and a 200mA collector current, housed in an ultra-small SOT-363 surface mount package.
✓ Total Stock: 403,484 pcs
$ Price Range: $0.99

MMDT3904-7-F Available from 7 distributors

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MMDT3904-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMDT3904-7-F Description

Short technical summary and product information.

The MMDT3904-7-F from Diodes Incorporated is a dual NPN small signal transistor ideal for medium power amplification and switching applications. It is constructed with epitaxial planar die technology and comes in an ultra-small SOT-363 surface mount package, making it suitable for space-constrained designs.

 

This transistor offers a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. It has a maximum power dissipation of 200mW and a gain bandwidth product (fT) of 300MHz. The operating temperature range is from -55°C to 150°C.

 

The MMDT3904-7-F is designed for high reliability and is qualified to AEC-Q101 standards. It is also fully RoHS compliant, halogen and antimony free, and considered a "Green" device. The terminals have a matte tin finish, making them solderable per MIL-STD-202, Method 208.

 

Key electrical characteristics include a collector-emitter saturation voltage (Vce(sat)) of 300mV at 5mA/50mA and a minimum DC current gain (hFE) of 100 at 10mA/1V. The device is supplied on a reel in a SOT-363 package.

MMDT3904-7-F Quick Information

Product Type: Bipolar Transistor
Series: MMDT3904
Canonical Name: MMDT3904-7-F Dual NPN Small Signal Transistor
Subcategory: BJT Arrays

MMDT3904-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMDT3904-7-F Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMDT3904-7-F Features

  • Dual NPN small signal transistor.
  • 40V collector-emitter voltage rating.
  • 200mA maximum collector current.
  • 300MHz gain bandwidth product.
  • Ultra-small SOT-363 surface mount package.

MMDT3904-7-F Applications

  • Used in switching power supplies
  • Suitable for signal amplification
  • Ideal for RF and high-speed circuits
  • Applied in automotive and industrial electronics

MMDT3904-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the MMDT3904-7-F?

The collector-emitter voltage (VCEO) of the MMDT3904-7-F is 40V.

What is the maximum collector current for this transistor?

The maximum continuous collector current (IC) for the MMDT3904-7-F is 200mA.

What is the operating temperature range?

The MMDT3904-7-F operates between -55°C and 150°C.

What package type is the MMDT3904-7-F supplied in?

This transistor is supplied in a SOT-363 package.

Is the MMDT3904-7-F RoHS compliant?

Yes, the MMDT3904-7-F is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) for the MMDT3904-7-F is Level 1.

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