BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The ON Semiconductor MMDF3N04HDR2G is a dual N-channel Power MOSFET housed in an 8-SOIC package. This device offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 3.4A at 25°C. Its on-resistance (Rds(on)) is a maximum of 80 mOhm when tested at 3.4A and 10V gate-source voltage.
With a maximum power dissipation of 1.39W, the MMDF3N04HDR2G operates within a temperature range of -55°C to 150°C. It features logic-level gate control and is suitable for surface mounting. The component is supplied in Cut Tape (CT) packaging.
Key electrical characteristics include an input capacitance (Ciss) of 900pF at 32V and a gate charge (Qg) of 28nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. This MOSFET array is designed for applications requiring efficient power switching.
The drain-source voltage (Vds) for the MMDF3N04HDR2G is 40V.
The continuous drain current (Id) at 25°C for the MMDF3N04HDR2G is 3.4A.
The maximum on-resistance (Rds(on)) for the MMDF3N04HDR2G is 80 mOhm at 3.4A and 10V.
The operating temperature range for the MMDF3N04HDR2G is -55°C to 150°C.
The MMDF3N04HDR2G is a dual N-channel Power MOSFET with logic-level gate control.
The MMDF3N04HDR2G is supplied in an 8-SOIC package for surface mounting.