| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 0316+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (Maximum @ TA = 70 °C (Note 1) | |
| Drain Current (Maximum @ Ta=25 °C, Note 1) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate To Source Voltage (@ Continuous) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating and Storage Temperature Range | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Total Power Dissipation (Maximum @ TA = 25 °C, Note 1) | |
| Total Power Dissipation (Maximum @ TA = 25 °C, Note 2) | |
| Vgs(th) (Max) @ Id |
The MMDF3N04HDR2 from ON Semiconductor is a dual N-Channel Power MOSFET designed for low voltage, high-speed switching applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 3.4A at 25°C ambient temperature. The MOSFET offers a low on-resistance (Rds On) of 80mOhm at 3.4A and 10V gate-to-source voltage, contributing to higher efficiency and extended battery life in portable devices.
This device supports logic-level gate drive, allowing it to be directly controlled by logic ICs. Its miniature 8-SOIC surface mount package saves valuable board space. The drain-to-source diode is characterized for use in bridge circuits and exhibits high speed with soft recovery. Typical applications include DC-DC converters, power management in portable and battery-powered products like computers and phones, and low-voltage motor controls in mass storage devices. The operating temperature range is from -55°C to 150°C. The device is specified with an input capacitance (Ciss) of 900pF at 32V and a gate charge (Qg) of 28nC at 10V. It also features a specified avalanche energy of 162mJ, providing an additional safety margin against unexpected voltage transients when switching inductive loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current is 3.4A at 25°C ambient temperature.
The Rds On is a maximum of 80mOhm at 3.4A drain current and 10V gate-to-source voltage.
It is supplied in an 8-SOIC package.
The operating and storage temperature range is -55°C to 150°C.
Yes, it features logic-level gate drive.