| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,104 pcs
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5104 pcs | On Request | 1 | On Request | On Request | 0203+ | On Request | On Request |
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The MMDF2P01HDR2 is a P-Channel Power MOSFET manufactured by ON Semiconductor. This component is designed for switching applications and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 12V and a maximum drain current of 3.4A. The maximum drain-source on-resistance is 0.18 Ohms. It has a maximum operating temperature of 150°C and a maximum power dissipation of 2W.
The MOSFET is housed in a SO-8 package, which is a small outline, surface-mount type with gull wing terminals. The package body material is plastic/epoxy. The component has 8 terminals and is constructed with silicon as the transistor element material.
This device is suitable for various switching applications in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 12V.
The maximum drain current is 3.4A.
The maximum drain-source on-resistance is 0.18 Ohms.
The maximum operating temperature is 150°C.
The MMDF2P01HDR2 is supplied in a SO-8 package.