| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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170,000 pcs
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170000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The MMD80R900PCRH is a power MOSFET manufactured by Magnachip Semiconductor, utilizing advanced super junction technology. This technology enables very low on-resistance and gate charge, contributing to high efficiency through optimized charge coupling.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 800V and a maximum Drain-Source On-State Resistance of 0.9 Ohms at a test condition of VGS = 10V and ID = 3.8A. The device offers a continuous drain current of 6.0A at 25℃ and 3.8A at 100℃, with a pulsed drain current up to 18A. Its power dissipation is rated at 75.8W.
Designed for high-speed switching applications, the MMD80R900PCRH provides low power loss and low EMI advantages. It is 100% avalanche tested and comes in a green package with Pb-free plating and halogen-free materials.
The MOSFET is housed in a TO-252 (D-PAK) package, suitable for various switching applications. Its operating temperature range is -55 to 150℃, with a maximum junction temperature of 150℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source voltage is 800V.
The typical Gate Threshold Voltage is 3V.
The maximum Drain-Source On-State Resistance is 0.9 Ohms.
The continuous drain current at 25℃ is 6.0A.
The operating temperature range is -55 to 150℃.
It is supplied in a TO-252 (D-PAK) package.
Yes, this component is Halogen Free.