| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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330 pcs
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330 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The MMBZ33VCL from NXP Semiconductors is a unidirectional double ElectroStatic Discharge (ESD) protection diode. It is encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package and is designed for ESD and transient overvoltage protection of up to two signal lines. This device features a reverse standoff voltage of 26V, a low diode capacitance of up to 55 pF, and an ultra-low leakage current of 5 nA. It provides ESD protection up to 30 kV contact discharge and is IEC 61000-4-2 level 4 compliant. The rated peak pulse power is 40W.
Applications for the MMBZ33VCL include computers and peripherals, automotive electronic control units, audio and video equipment, portable electronics, and cellular handsets and accessories. The diode is AEC-Q101 qualified, indicating its suitability for automotive applications. The common cathode configuration allows for unidirectional ESD protection of two lines or bidirectional protection of one line.
The reverse standoff voltage (VRWM) is 26 V.
The rated peak pulse current (IPPM) is 0.87 A for a 10/1000 µs pulse.
The MMBZ33VCL is offered in a SOT23 surface-mount package.
It meets IEC 61000-4-2 contact discharge at 30 kV, air discharge at 15 kV, and MIL-STD-883 HBM at 8 kV.
The maximum leakage current is 5 nA.
Typical diode capacitance is 45 pF, with a maximum of 55 pF at 0 V and 1 MHz.
Total power dissipation is 350 mW at ambient temperature up to 25°C.