| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,928 pcs
|
2928 pcs | On Request | 1 | On Request | On Request | 51 | On Request | On Request |
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| Tape & Reel | |
| Voltage |
The MMBV2105LT1 is a silicon tuning diode from onsemi, part of the MMBV2101LT1 series. It is designed for high volume requirements in FM radio and TV tuning, AFC, and general frequency control applications. The device provides solid-state reliability as a replacement for mechanical tuning methods.
Key electrical specifications include a maximum reverse voltage of 30V, a diode capacitance of 6.8pF (typical) at VR=4V and f=1MHz, and a capacitance ratio (C2/C30) of 3.2. The diode exhibits a high Q factor of 400 at VR=4V and f=50MHz, and a low reverse leakage current of 0.1µA maximum at VR=25V. The forward current rating is 200mA maximum, with a power dissipation of 225mW at 25°C.
The device is offered in a surface mount SOT-23 (TO-236) package, supplied in tape and reel with a standard quantity of 3000 pieces. It is rated for operation up to a junction temperature of 150°C and can be stored from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30V.
The typical diode capacitance is 6.8pF at VR=4V and f=1MHz.
The device is offered in a surface mount SOT-23 (TO-236) package.
The Q factor is 400 typical at VR=4V and f=50MHz.
The capacitance ratio (C2/C30) is 3.2 typical.