| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The MMBV2101LT1G is a silicon tuning diode (varactor) from On Semiconductor, designed for FM radio and TV tuning, automatic frequency control (AFC), and general frequency control applications. It provides solid-state reliability as a replacement for mechanical tuning methods.
This single diode features a maximum reverse voltage of 30 V, typical capacitance of 6.8 pF at 4 V and 1 MHz, and a capacitance ratio (C2/C30) of 2.5/2.7/3.2 (min/typ/max). The quality factor (Q) is 450 typical at 4 V and 50 MHz. Reverse leakage current is limited to 0.1 µA maximum at 25 V and 25°C, and maximum forward current is 200 mA.
The device is housed in a surface mount SOT-23-3 (TO-236) package and supports an operating junction temperature up to 150°C. Power dissipation is 225 mW at 25°C. The Pb-Free version (MMBV2101LT1G) is available. Standard packaging is tape and reel with 3000 units per reel.
30 V.
200 mA.
SOT-23-3 (TO-236).
6.8 pF at 4 V, 1 MHz.
2.5/2.7/3.2 (min/typ/max).
450 typical at 4 V, 50 MHz.
RoHS3 compliant (unverified).