MMBV105GLT1G MMBV105GLT1G is a 30V silicon tuning diode from On Semiconductor in a SOT-23 surface mount package. It features a capacitance range of 1.5 pF to 2.8 pF and a typical Q factor of 250.
Mfr Part #:

MMBV105GLT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
MMBV105GLT1G is a 30V silicon tuning diode from On Semiconductor in a SOT-23 surface mount package. It features a capacitance range of 1.5 pF to 2.8 pF and a typical Q factor of 250.
✓ Total Stock: 11,866 pcs
$ Price Range: $0.38

MMBV105GLT1G Available from 4 distributors

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✓ Non-Authorised
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5,915 pcs
5915 pcs On Request 1 On Request On Request 10+ On Request On Request
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4,074 pcs
4074 pcs On Request 1 On Request On Request N/A On Request On Request
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1,369 pcs
1369 pcs On Request 1 On Request On Request 2009 On Request On Request
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508 pcs
508 pcs On Request 1 On Request On Request On Request On Request On Request

MMBV105GLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Capacitance Ratio
Capacitance Ratio Condition
Diode Type
Forward Current
Halogen Free
Junction Temperature
Lead Spacing
Lead Style
Medical Grade
Mounting Type
Q @ Vr, F
Reverse Voltage
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage

MMBV105GLT1G Description

Short technical summary and product information.

The MMBV105GLT1G is a silicon tuning diode designed for general frequency control and tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods.

 

Key electrical specifications include a maximum reverse voltage of 30 V, a maximum forward current of 200 mA, and a capacitance range of 1.5 pF to 2.8 pF at 25 V and 1 MHz. The diode offers a capacitance ratio (C3/C25) of 4.0 to 6.5 and a typical quality factor (Q) of 250 at 3 V and 50 MHz. Maximum reverse leakage current is 50 nA at 28 V.

 

The device is housed in a SOT-23 (TO-236) surface mount package and is rated for a maximum power dissipation of 225 mW at 25°C. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

MMBV105GLT1G Quick Information

Product Type: Silicon Tuning Diode
Canonical Name: MMBV105GLT1G Silicon Tuning Diode
Subcategory: Varactor Diode

MMBV105GLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

MMBV105GLT1G Estimated Pricing

Qty Low High
790+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBV105GLT1G Features

  • Single silicon tuning diode design.
  • Maximum reverse voltage of 30 V.
  • Capacitance range 1.5 pF to 2.8 pF.
  • Typical Q factor of 250 at 50 MHz.
  • Surface mount SOT-23 package.

MMBV105GLT1G Applications

  • Frequency control and tuning circuits.
  • Replacement for mechanical tuning methods.
  • RF oscillator and filter tuning.
  • Voltage-controlled oscillator (VCO) applications.

MMBV105GLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MMBV105GLT1G?

The maximum reverse voltage is 30 V.

What is the capacitance range of this varactor diode?

The capacitance ranges from 1.5 pF to 2.8 pF at 25 V and 1 MHz.

What is the package type for the MMBV105GLT1G?

The device is packaged in SOT-23 (TO-236) for surface mount.

What is the typical Q factor of this tuning diode?

The typical Q factor is 250 at 3 V and 50 MHz.

What is the maximum forward current rating?

The maximum forward current is 200 mA.

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