| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,270 pcs
|
2270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Halogen Free | |
| Junction Temperature | |
| Medical Grade | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Voltage | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel | |
| Termination Style |
The MMBV105GLT1 is a silicon tuning diode manufactured by ON Semiconductor, optimized for general frequency control and tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device is rated for a maximum reverse voltage of 30 V, a maximum forward current of 200 mA, and a power dissipation of 225 mW at 25°C ambient temperature.
Electrically, the diode exhibits a reverse breakdown voltage of 30 V minimum at 10 µA, and a reverse leakage current of 50 nA maximum at 28 V. At 25 V reverse bias and 1 MHz, the diode capacitance ranges from 1.5 to 2.8 pF. The figure of merit Q is typically 250 at 3 V and 50 MHz, and the capacitance ratio C3/C25 is between 4.0 and 6.5 at 1 MHz. These characteristics make it suitable for tuning circuits in RF applications.
The device is housed in a SOT-23 (TO-236) surface mount package, supplied in tape and reel with 3000 pieces per reel. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The operating junction temperature range is up to 125°C, with a storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 790+ | $0.38 | $0.38 |
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.08 | $0.08 |
| 15,000+ | $0.08 | $0.08 |
| 21,000+ | $0.08 | $0.08 |
| 30,000+ | $0.07 | $0.07 |
| 75,000+ | $0.07 | $0.07 |
| 150,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30 V.
The maximum forward current is 200 mA.
The device is packaged in SOT-23 (TO-236) surface mount package.
The diode capacitance at VR = 25 V and f = 1 MHz is 1.5 to 2.8 pF.
The capacitance ratio C3/C25 is 4.0 to 6.5 at 1 MHz.
The typical figure of merit Q is 250 at VR = 3 V and f = 50 MHz.
The reverse leakage current is 50 nA maximum at VR = 28 V.