| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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234 pcs
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234 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTSC1815G from ST is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 150mA. The transistor offers a DC current gain (hFE) of 200 at 2mA and 6V, and a transition frequency (fT) of 80MHz. It also has an emitter-base voltage (Vebo) of 5V and a power dissipation rating of 200mW.
This component is suitable for various amplification and switching tasks in electronic circuits. Its SOT-23 package facilitates automated assembly processes on printed circuit boards. The RoHS3 compliant status indicates adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMBTSC1815G is 50V.
The maximum continuous collector current (Ic) for the MMBTSC1815G is 150mA.
The DC current gain (hFE) of the MMBTSC1815G is 200 at 2mA collector current and 6V collector-emitter voltage.
The MMBTSC1815G is available in the SOT-23 package.